RT Journal Article
T1 Optical energies of AllnN epilayers
A1 Nogales Díaz, Emilio
AB Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field.
PB American Institute of Physics
SN 0021-8979
YR 2008
FD 2008-04-01
LK https://hdl.handle.net/20.500.14352/52123
UL https://hdl.handle.net/20.500.14352/52123
LA eng
NO ©2008 American Institute of Physics.Financial support from the UK EPSRC, FCT, Portugal (BPD/18958/2004 and PTDC/FIS/65233/2006) and from the ORS award scheme (K.W.) is gratefully acknowledged.Artiículo firmado por  mas de 10 autores.
NO UK EPSRC
NO FCT, Portugal
DS Docta Complutense
RD 29 abr 2024