%0 Journal Article
%A Bruno, Flavio Yair
%A Garcia Barriocanal, Javier
%A Torija, M.
%A Rivera Calzada, Alberto Carlos
%A Sefrioui, Zouhair
%A Leighton, C.
%A León Yebra, Carlos
%A Santamaría Sánchez-Barriga, Jacobo
%T Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
%D 2008
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/51411
%X Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.
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