RT Journal Article
T1 Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
A1 Bruno, Flavio Yair
A1 Garcia Barriocanal, Javier
A1 Torija, M.
A1 Rivera Calzada, Alberto Carlos
A1 Sefrioui, Zouhair
A1 Leighton, C.
A1 León Yebra, Carlos
A1 Santamaría Sánchez-Barriga, Jacobo
AB Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.
PB American Institute of Physics
SN 0003-6951
YR 2008
FD 2008-02-25
LK https://hdl.handle.net/20.500.14352/51411
UL https://hdl.handle.net/20.500.14352/51411
LA eng
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NO © 2008 American Institute of Physics. The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.
NO MEC
NO NSF DMR
DS Docta Complutense
RD 1 may 2024