RT Journal Article
T1 Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon
A1 Lucía Mulas, María Luisa
A1 Pampillón Arce, María Ángela
A1 San Andrés Serrano, Enrique
A1 Feijoo Guerrero, Pedro Carlos
AB Gadolinium oxide thin films were deposited on silicon by a two-step process: high pressure sputtering from a metallic gadolinium target followed by an in situ plasma oxidation. Several plasma conditions for metal deposition and oxidation were studied in order to minimize the growth of a SiOx layer at the interface between the high permittivity dielectric and the silicon substrate and to avoid substrate damage. Plasma emission was studied with glow discharge optical spectroscopy. The films were structurally characterized by Fourier transform infrared spectroscopy. Metal-insulator-semiconductor capacitors were fabricated with two different top metals (titanium and platinum) to analyze the influence of deposition conditions and the metal choice. Pt gated devices showed an interfacial SiOx regrowth after a forming gas annealing, while Ti gates scavenge the interface layer.
PB AVS Amer Inst. Physics
SN 1071-1023
YR 2013
FD 2013-01
LK https://hdl.handle.net/20.500.14352/33694
UL https://hdl.handle.net/20.500.14352/33694
LA eng
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NO © American Vacuum Society. The authors would like to acknowledge C.A.I. de Técnicas Físicas and C.A.I. de Espectroscopía y Espectrometría of the Universidad Complutense de Madrid. This work was funded by the Spanish Ministerio de Economía y Competividad through the project TEC2010-18051. Works of M.A. Pampillón and P.C. Feijoo were funded by the FPI program and FPU Grant No. AP2007-01157, respectively.
NO Spanish Ministerio de Economía y Competividad
NO FPI program
NO FPU program
DS Docta Complutense
RD 28 abr 2024