%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A Barbolla, J.
%A Castán, E.
%A Dueñas, S.
%A Peláez, R.
%A Pinacho, R.
%A Quintanilla, L.
%T Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
%D 1997
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/59302
%X Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.
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