RT Journal Article
T1 Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Barbolla, J.
A1 Castán, E.
A1 Dueñas, S.
A1 Peláez, R.
A1 Pinacho, R.
A1 Quintanilla, L.
AB Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.
PB Amer Inst Physics
SN 0003-6951
YR 1997
FD 1997-08-11
LK https://hdl.handle.net/20.500.14352/59302
UL https://hdl.handle.net/20.500.14352/59302
LA eng
NO © American Institute of Physics.
DS Docta Complutense
RD 10 abr 2025