TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Barbolla, J.
AU  - Castán, E.
AU  - Dueñas, S.
AU  - Peláez, R.
AU  - Pinacho, R.
AU  - Quintanilla, L.
PY  - 1997
DO  - 10.1063/1.119658
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/59302
T2  - Applied physics Letters
AB  - Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients...
LA  - eng
M2  - 826
PB  - Amer Inst Physics
KW  - Silicon-Nitride
KW  - Spectroscopy.
TI  - Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
TY  - journal article
VL  - 71
ER  -