TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
AU  - San Andrés Serrano, Enrique
PY  - 2010
DO  - 10.1063/1.3391274
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/44244
T2  - Journal of Applied Physics
AB  - In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material is to...
LA  - eng
PB  - American Institute of Physics
KW  - Solar-Cells
KW  - Silicon
KW  - Efficiency
KW  - Alloys.
TI  - High quality Ti-implanted Si layers above the Mott limit
TY  - journal article
VL  - 107
ER  -