RT Book, Section
T1 Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Dutta, P. S.
AB Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.
PB Materials Research Society
SN 1-55899-416-5
YR 1998
FD 1998
LK https://hdl.handle.net/20.500.14352/60818
UL https://hdl.handle.net/20.500.14352/60818
NO © Materials Research Society.Symposium on Defect and Impurity Engineered Semiconductors II at the Materials-Research-Society Spring Meeting (1998. San Francisco, California).
DS Docta Complutense
RD 9 abr 2025