TY  - JOUR
AU  - González Díaz, Germán
AU  - Martín, J.M.
AU  - Barbolla, J.
AU  - Castán, E.
AU  - Dueñas, S.
AU  - Pinacho, R.
AU  - Quintanilla, L.
PY  - 1997
DO  - 10.1063/1.364348
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59346
T2  - Journal of Applied Physics
AB  - In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using...
LA  - eng
M2  - 3143
PB  - American Institute of Physics
KW  - Chemical Vapor-Deposition
KW  - Transient Spectroscopy
KW  - Depth Profiles
KW  - Fe
KW  - Temperature
KW  - Silicon
KW  - Defects
KW  - Diodes
KW  - Growth
KW  - Traps.
TI  - Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
TY  - journal article
VL  - 81
ER  -