TY  - JOUR
AU  - Khaouani, Mohammed
AU  - Sessa, Andrea
AU  - De Stefano, Sebastiano
AU  - Rouigueb, Hichem
AU  - Belbachir, Mohammed Anes
AU  - Mazzotti, Adolfo
AU  - Pelella, Aniello
AU  - Durante, Ofelia
AU  - Di Bartolomeo, Antonio
AU  - García Hemme, Eric
PY  - 2026
DO  - 10.1016/j.physb.2026.418479
SN  - 0921-4526
UR  - https://hdl.handle.net/20.500.14352/136750
T2  - Physica B: Condensed Matter
AB  - Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable...
LA  - eng
M2  - 418479-1
PB  - Elsevier
KW  - Abstract
KW  - Ideality factor
KW  - High-efficiency
KW  - Recombination
KW  - Photodiode
KW  - Voltage
TI  - Experiment and simulation in silicon PN-junction photodetectors: insights into electrical and optical transport
TY  - journal article
VL  - 730
ER  -