RT Journal Article
T1 Subband energy in two-band δ-doped semiconductors
A1 Domínguez-Adame Acosta, Francisco
AB We study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the  δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.
PB Elsevier
SN 0375-9601
YR 1996
FD 1996-02-19
LK https://hdl.handle.net/20.500.14352/59984
UL https://hdl.handle.net/20.500.14352/59984
LA eng
NO © Elsevier B.V. or its licensors or contributors. This work is supported by CICYT (Spain) through project MAT95-0325.
NO Comisión Interministerial de Ciencia y Tecnología (CICYT), España
DS Docta Complutense
RD 7 abr 2025