%0 Journal Article
%A Díaz-Guerra Viejo, Carlos
%A Chioncel, M. F.
%A Vincent, J
%A Piqueras De Noriega, Francisco Javier
%A Bermudez, V.
%A Diéguez, E.
%T Study of defects in In_xGa_(1-x)Sb bulk crystals
%D 2005
%@ 1610-1634
%U https://hdl.handle.net/20.500.14352/51138
%X The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 degrees C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.
%~