RT Journal Article
T1 Study of defects in In_xGa_(1-x)Sb bulk crystals
A1 Díaz-Guerra Viejo, Carlos
A1 Chioncel, M. F.
A1 Vincent, J
A1 Piqueras De Noriega, Francisco Javier
A1 Bermudez, V.
A1 Diéguez, E.
AB The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 degrees C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.
PB Wiley-V C H Verlag GmbH
SN 1610-1634
YR 2005
FD 2005
LK https://hdl.handle.net/20.500.14352/51138
UL https://hdl.handle.net/20.500.14352/51138
NO © Wiley-V C H Verlag GmbH.International Conference on Extended Defects in Semiconductors (10. 2004. Chernogolovka, Rusia).
DS Docta Complutense
RD 8 abr 2025