RT Journal Article
T1 Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
A1 Gao, Z.
A1 Romero, M.F.
A1 Pampillón Arce, María Ángela
A1 San Andrés Serrano, Enrique
A1 Calle, F.
AB Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.
PB IEEE
SN 2163-4971
YR 2015
FD 2015
LK https://hdl.handle.net/20.500.14352/35230
UL https://hdl.handle.net/20.500.14352/35230
LA eng
NO © Copyright 2016 IEEE. Spanish Conference Electron Devices (CDE) (10th. 2015. Aranjuez/Spain). The work is supported by the Spanish Ministerio de Ciencia e Innovación, projects RUE (CSD2009-00046), CAVE (TEC2012-38247) and TEC2010-18051, and FPI grant (BES-2011-043798). The authors acknowledge Ms. María del Carmen Sabido and Ms. Alicia Fraile Chamizo for technical assistance.
NO Spanish Ministerio de Ciencia e Innovación
NO CAVE
NO FPI
DS Docta Complutense
RD 6 abr 2025