TY  - JOUR
AU  - Gao, Z.
AU  - Romero, M.F.
AU  - Pampillón Arce, María Ángela
AU  - San Andrés Serrano, Enrique
AU  - Calle, F.
PY  - 2015
DO  - 10.1109/cde.2015.7087508
SN  - 2163-4971
UR  - https://hdl.handle.net/20.500.14352/35230
T2  - Proceedings of the of the 2015 10th spanish conference on electron devices
AB  - Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are...
LA  - eng
M2  - 78
PB  - IEEE
KW  - AlGaM/GaN
KW  - Gd2O3
KW  - HEMTs
KW  - MOS-HEMTs
KW  - Thermal stability
KW  - Hig-k dielectric.
TI  - Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
TY  - journal article
ER  -