RT Journal Article
T1 Crossed Ga_2O_3/SnO_2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution
A1 Martínez Criado, Gema
A1 Segura Ruiz, Jaime
A1 Manh-Hung, Chu
A1 Tucoulou, Remi
A1 López García, Iñaki
A1 Nogales Díaz, Emilio
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
AB Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an  ideal model to the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga_2O_3/SnO_2 nanowires. Our experiment opens  new avenues for further local structure studies with both nanometer resolution and elemental  sensitivity.
PB Amer Chemical Soc
SN 1530-6984
YR 2014
FD 2014-10
LK https://hdl.handle.net/20.500.14352/34900
UL https://hdl.handle.net/20.500.14352/34900
LA eng
NO © 2014 American Chemical Society.The authors thank Irina Snigireva and Armando Vicente Solé for their assistance with the SEM measurements and data processing using PyMca, respectively. We thank Peter Cloetens and Sylvain Labouréfor their help and the ESRF for the beam time allocated. This work has been partially supported by the NANOWIRING Marie Curie ITN (EU project no. PITN-GA- 2010 -265073) and by MINECO (Projects MAT 2012-31959 and Consolider Ingenio CSD 2009-00013).
NO Unión Europea. FP7
NO Marie Curie ITN (EU)
NO Ministerio de Economía y Competitividad (MINECO)
NO Consolider Ingenio
DS Docta Complutense
RD 10 abr 2025