RT Journal Article
T1 CEPRAM: Compression for Endurance in PCM RAM
A1 González Alberquilla, Rodrigo
A1 Castro Rodríguez, Fernando
A1 Piñuel Moreno, Luis
A1 Tirado Fernández, José Francisco
AB We deal with the endurance problem of Phase Change Memories (PCM) by proposing Compression for Endurance in PCM RAM (CEPRAM), a technique to elongate the lifespan of PCM-based main memory through compression. We introduce a total of three compression schemes based on already existent schemes, but targeting compression for PCM-based systems. We do a two-level evaluation. First, we quantify the performance of the compression, in terms of compressed size, bit-flips and how they are affected by errors. Next, we simulate these parameters in a statistical simulator to study how they affect the endurance of the system. Our simulation results reveal that our technique, which is built on top of Error Correcting Pointers (ECP) but using a high-performance cache-oriented compression algorithm modified to better suit our purpose, manages to further extend the lifetime of the memory system. In particular, it guarantees that at least half of the physical pages are in usable condition for 25% longer than ECP, which is slightly more than 5% more than a scheme that can correct 16 failures per block.
PB World Scientific Publ co Pte LTD
SN 0218-1266
YR 2017
FD 2017-04-04
LK https://hdl.handle.net/20.500.14352/18143
UL https://hdl.handle.net/20.500.14352/18143
LA eng
NO © World Scientific Publishing Company. This work has been supported by the Spanish government through the research contracts TIN2012-32180 and TIN 2015-65277-R, and the HIPEAC-4 European Network of Excellence.
NO Ministerio de Ciencia e Innovación (MICINN)
NO HIPEAC-4 European Network of Excellence
DS Docta Complutense
RD 28 abr 2025