RT Journal Article
T1 Influence on the magnetoresistance of a spin valve due to the insertion of an ultrathin Gd layer in the free layer
A1 Romera Rabasa, Miguel Álvaro
A1 Muñoz García, Mercedes
A1 Sánchez, P.
A1 Aroca, C.
A1 Prieto, J. L.
AB The effect of inserting an ultrathin Gd layer (1-2 nm) in the free layer of a Permalloy-based spin valve has been investigated. In the current in-plane configuration, samples with Gd show a reduced magnetoresistance (MR) value, which tends to zero as Gd gets closer to the nonmagnetic spacer, although good MR values can be sustained when Gd is more than 5 nm away from the spacer. We studied also the effect of adding thin Fe layers around Gd in order to avoid Gd diffusion within the Permalloy. Samples with an Fe/Gd/Fe trilayer inserted in the free layer show some improvement at low temperatures over those without Fe, although the Fe introduces some detrimental additional roughness. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3173580]
PB American Institute of Physics
SN 0021-8979
YR 2009
FD 2009-07-15
LK https://hdl.handle.net/20.500.14352/95940
UL https://hdl.handle.net/20.500.14352/95940
LA eng
NO M. Romera, M. Muñoz, P. Sánchez, C. Aroca, J. L. Prieto; Influence on the magnetoresistance of a spin valve due to the insertion of an ultrathin Gd layer in the free layer. J. Appl. Phys. 15 July 2009; 106 (2): 023922. https://doi.org/10.1063/1.3173580
NO Ministerio de Ciencia e Innovación (España)
DS Docta Complutense
RD 12 abr 2025