TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
PY  - 2001
DO  - 10.1103/PhysRevB.63.245320
SN  - 0163-1829
UR  - https://hdl.handle.net/20.500.14352/59109
T2  - Physical review B
AB  - Hydrogen and nitrogen release processes in amorphous silicon nitride dielectrics have been studied by MeV ion scattering spectrometry in combination with infrared spectroscopy. The outdiffusion of those light constituents was activated by the thermal...
LA  - eng
PB  - American Physical Society
KW  - Electron-Cyclotron-Resonance
KW  - Cehmical-Vapor-Deposition
KW  - Silicon-Nitride Films. Insulator-Semiconductor Structures
KW  - Amorphous Hydrogenated Silicon
KW  - Gate Dielectrics
KW  - Infrared-Spectroscopy
KW  - Crystalline Silicon
KW  - Si-SiO2 Interfaces
KW  - Optical-Properties.
TI  - Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing
TY  - journal article
VL  - 63
ER  -