TY  - JOUR
AU  - Barbosa, Marcelo B.
AU  - Correia, Joao Guilherme
AU  - Lorenz, Katharina
AU  - Lopes, Armandina M. L.
AU  - Oliveira, Gonçalo N. P.
AU  - Fenta, Abel S.
AU  - Schell, Juliana
AU  - Teixeira, Ricardo
AU  - Nogales Díaz, Emilio
AU  - Méndez Martín, Bianchi
AU  - Stroppa, Alessandro
AU  - Araujo, Joao Pedro
PY  - 2022
DO  - 10.1038/s41598-022-18121-y
SN  - 2045-2322
UR  - https://hdl.handle.net/20.500.14352/72096
T2  - Scientific reports
AB  - Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor beta-Ga_2O_3 could strongly influence and contribute to the development of the next generation of power electronics....
LA  - eng
PB  - Nature publishing group
KW  - Perturbed-angular-correlation
KW  - Gallium oxide
KW  - Defects
KW  - Dynamics
KW  - Bandgap
KW  - System
KW  - Tool
TI  - Contactless doping characterization of Ga_2O_3 using acceptor Cd probes
TY  - journal article
VL  - 12
ER  -