%0 Journal Article
%A Nogales Díaz, Emilio
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Plugaru, R
%T Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope
%D 2003
%@ 0957-4484
%U https://hdl.handle.net/20.500.14352/50969
%X Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.
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