RT Journal Article
T1 Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope
A1 Nogales Díaz, Emilio
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Plugaru, R
AB Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.
PB Iop Publishing Ltd
SN 0957-4484
YR 2003
FD 2003-01
LK https://hdl.handle.net/20.500.14352/50969
UL https://hdl.handle.net/20.500.14352/50969
LA eng
NO © 2003 IOP Publishing Ltd.This work has been supported by MCYT (Project MAT 2000-2119). RP acknowledges MECD for the research grant SB2000-0164.
NO MCYT
NO MECD
DS Docta Complutense
RD 9 abr 2025