%0 Journal Article
%A Díez Alcántara, Eduardo
%A Domínguez-Adame Acosta, Francisco
%A Sánchez, Angel
%T Thomas-fermi approach to resonant-tunneling in delta-doped diodes
%D 1995
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59376
%X We study resonant tunneling in B-S-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation. we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. 0 1995 American Institute of Physics.
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