RT Journal Article
T1 Thomas-fermi approach to resonant-tunneling in delta-doped diodes
A1 Díez Alcántara, Eduardo
A1 Domínguez-Adame Acosta, Francisco
A1 Sánchez, Angel
AB We study resonant tunneling in B-S-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation. we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. 0 1995 American Institute of Physics.
PB American Institute of Physics
SN 0021-8979
YR 1995
FD 1995-05-01
LK https://hdl.handle.net/20.500.14352/59376
UL https://hdl.handle.net/20.500.14352/59376
LA eng
NO © 1995 American- Institute of Physics.F. D.-A. acknowledges support from UCM through project PR161/93-4811. A. S. acknowledges partial support from C.I.C. y T. (Spain) through project PB92-0248 and by the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413.
NO UCM
NO C.I.C. y T. (Spain)
NO European Union Human Capital and Mobility Programme
DS Docta Complutense
RD 10 abr 2025