RT Journal Article
T1 Investigation and identification of transition metals in p-type boron-doped silicon by non-invasive techniques
A1 Palais, O.
A1 Hidalgo Alcalde, Pedro
AB This paper describes the "pairing - dissociation" behaviour of metal-acceptor pairs and proposes a method to measure metal concentrations in p-type boron doped silicon based on a contactless measurement technique. The first part of this paper sums up the previous non destructive electrical characterization methods that have led to the evaluation of iron concentrations in p-type boron-doped silicon by the inspired contactless techniques. It is demonstrated that the lifetime measurement method proposed allows the detection of contaminants at concentrations as low as 10(9) at.cm(-3). In the second part, the specific cases of iron and chromium that are among the most harmful metal contaminants are discussed. We show that these contaminants, even if their concentrations are not known, are identifiable by contactless measurements that allow the analysis of their kinetics of pairing with boron atoms and of their respective interactions with extended defects, such as grain boundaries in multicrystalline silicon.
PB Trans Tech Publications Ltd
SN 1012-0386
YR 2004
FD 2004
LK https://hdl.handle.net/20.500.14352/51068
UL https://hdl.handle.net/20.500.14352/51068
NO © Trans Tech Publications Ltd
DS Docta Complutense
RD 7 abr 2025