TY  - JOUR
AU  - Palais, O.
AU  - Hidalgo Alcalde, Pedro
PY  - 2004
SN  - 1012-0386
UR  - https://hdl.handle.net/20.500.14352/51068
T2  - Defects and Diffusion in Semiconductors - an Annual Retrospective VII-
AB  - This paper describes the "pairing - dissociation" behaviour of metal-acceptor pairs and proposes a method to measure metal concentrations in p-type boron doped silicon based on a contactless measurement technique. The first part of this paper sums up...
M2  - 125
PB  - Trans Tech Publications Ltd
KW  - Iron
TI  - Investigation and identification of transition metals in p-type boron-doped silicon by non-invasive techniques
TY  - journal article
VL  - 230
ER  -