RT Journal Article
T1 Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
A1 StorgardsStorgards, J.
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Storgards, M.
A1 Dimroth, F.
A1 Bett, A.W.
AB The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the structures. The luminescence bands observed in the GaSb layers are related to near band edge recombination and to an excess of Ga. In the case of AlGaSb/GaSb heterostructure emission bands related to the ternary compound and to donor-acceptor recombination are detected. In addition, with the aid of a scanning tunnelling microscope (STM), local electronic properties, such as conductance and surface energy gap, were studied in sample cross-sections. The results obtained from imaging and spectroscopy modes of STM enabled us to image the single AlGaSb layer.
PB Institute of Physics
SN 0953-8984
YR 2004
FD 2004-06-21
LK https://hdl.handle.net/20.500.14352/50965
UL https://hdl.handle.net/20.500.14352/50965
LA eng
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NO © 2004 IOP Publishing Ltd.This work was carried out in the framework of a European network project (HPRN-CT-2001-00199). Partial support of MCYT (MAT2000-2119) is acknowledged.International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, (BIAMS 2003) (7. 2003. Lille, Francia)
NO European network project
NO MCYT
DS Docta Complutense
RD 29 abr 2024