TY  - JOUR
AU  - StorgardsStorgards, J.
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Storgards, M.
AU  - Dimroth, F.
AU  - Bett, A.W.
PY  - 2004
DO  - 10.1088/0953-8984/16/2/030
SN  - 0953-8984
UR  - https://hdl.handle.net/20.500.14352/50965
T2  - Journal of Physics: Condensed Mater
AB  - The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of...
LA  - eng
PB  - Institute of Physics
KW  - Vapor-Phase Epitaxy
KW  - Si(111)2x1 Surface
KW  - Doped Gasb
KW  - Photoluminescence
KW  - Spectroscopy
KW  - Growth
TI  - Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
TY  - journal article
VL  - 16
ER  -