TY  - JOUR
AU  - Wang, K.
AU  - Martin, R. W.
AU  - O’Donnell, K. P.
AU  - Katchkanov, V.
AU  - Nogales Díaz, Emilio
AU  - Lorenz, K.
AU  - Alves, E.
AU  - Ruffenach, S.
AU  - Briot, O.
PY  - 2005
DO  - 10.1063/1.2045551
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/52129
T2  - Applied physics letters
AB  - The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ⁰C. Photoluminescence...
LA  - eng
PB  - American Institute of Physics
KW  - Earth-doped gan
KW  - Growth
KW  - Er
KW  - Electroluminescence
KW  - Emission
TI  - Selectively excited photoluminescence from Eu-implanted GaN
TY  - journal article
VL  - 87
ER  -