TY  - CHAP
AU  - Clemente Barreira, Juan Antonio
AU  - Franco Peláez, Francisco Javier
AU  - Villa, Francesca
AU  - Rey, Sole
AU  - Baylac, Maud
AU  - Mecha López, Hortensia
AU  - Agapito Serrano, Juan Andrés
AU  - Puchner, Helmut
AU  - Hubert, Guillaume
AU  - Velazco, Raoul
PY  - 2015
DO  - 10.1109/RADECS.2015.7365670
SN  - 978-1-5090-0232-0
UR  - https://hdl.handle.net/20.500.14352/24710
AB  - This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.
LA  - eng
M2  - 507
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - SRAMs
KW  - Single event upsets
KW  - Multiple cell upsets
KW  - Neutron tests
TI  - Statistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs
T2  - Anomalías estadísticas de los bits corruptos en memorias estáticas de acceso aleatorio para distinguir eventos múltiples de simples.
TY  - book part
ER  -