TY  - JOUR
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Dutta, P: S.
PY  - 2001
DO  - 10.1016/S0921-5107(00)00635-8
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/58935
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - We report here the studies carried out in zinc diffused n-type GaSb by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. Samples with different diffusion profiles measured by secondary ion mass spectrometry (SIMS) were...
LA  - eng
M2  - 125
PB  - Elsevier Science SA
KW  - Gaas-Te Wafers
KW  - Doped Gasb
KW  - Gallium Antimonide
KW  - Liquid-Phase
KW  - Photoluminescence
KW  - Centers
KW  - Model
KW  - Zinc
TI  - Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy
TY  - journal article
VL  - 80
ER  -