%0 Journal Article
%A Enger, Luiz Guilherme
%A Flament, Stephane
%A Bhatti, Imtiaz-Noor
%A Guillet, Bruno
%A Sing, Marc Lam Chok
%A Pierron, Victor
%A Lebargy, Sylvain
%A Díez, Jose Manuel
%A Vera, Arturo
%A Martínez, Isidoro
%A Guerrero, Rubén
%A Pérez García, Lucas
%A Perna, Paolo
%A Camarero, Julio
%A Miranda, Rodolfo
%A González, María Teresa
%A Mechin, Laurence
%T Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
%D 2022
%@ 0018-9464
%U https://hdl.handle.net/20.500.14352/71377
%X Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.
%~