RT Journal Article
T1 Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
A1 Enger, Luiz Guilherme
A1 Flament, Stephane
A1 Bhatti, Imtiaz-Noor
A1 Guillet, Bruno
A1 Sing, Marc Lam Chok
A1 Pierron, Victor
A1 Lebargy, Sylvain
A1 Díez, Jose Manuel
A1 Vera, Arturo
A1 Martínez, Isidoro
A1 Guerrero, Rubén
A1 Pérez García, Lucas
A1 Perna, Paolo
A1 Camarero, Julio
A1 Miranda, Rodolfo
A1 González, María Teresa
A1 Mechin, Laurence
AB Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.
PB IEEE-Institute of Electrical and Electronics Engineers
SN 0018-9464
YR 2022
FD 2022-02
LK https://hdl.handle.net/20.500.14352/71377
UL https://hdl.handle.net/20.500.14352/71377
LA eng
NO ©2022Institute of Electrical and Electronics EngineersThis work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116.
NO Unión Europea. Horizonte 2020
DS Docta Complutense
RD 26 abr 2025