RT Journal Article T1 Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films A1 Enger, Luiz Guilherme A1 Flament, Stephane A1 Bhatti, Imtiaz-Noor A1 Guillet, Bruno A1 Sing, Marc Lam Chok A1 Pierron, Victor A1 Lebargy, Sylvain A1 Díez, Jose Manuel A1 Vera, Arturo A1 Martínez, Isidoro A1 Guerrero, Rubén A1 Pérez García, Lucas A1 Perna, Paolo A1 Camarero, Julio A1 Miranda, Rodolfo A1 González, María Teresa A1 Mechin, Laurence AB Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K. PB IEEE-Institute of Electrical and Electronics Engineers SN 0018-9464 YR 2022 FD 2022-02 LK https://hdl.handle.net/20.500.14352/71377 UL https://hdl.handle.net/20.500.14352/71377 LA eng NO ©2022Institute of Electrical and Electronics EngineersThis work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116. NO Unión Europea. Horizonte 2020 DS Docta Complutense RD 6 abr 2025