RT Journal Article
T1 Cathodoluminescence study of semiconductor oxide micro- and nanostructures grown by vapor deposition
A1 Piqueras De Noriega, Francisco Javier
A1 Maestre Varea, David
A1 Ortega Mallén, Yolanda
A1 Cremades Rodríguez, Ana Isabel
A1 Fernández Sánchez, Paloma
AB starting SnO_2, powder. In-rich nanoislands were found to grow on some edges of the tubes. ZnO nanostructures doped with Sri or Eu were grown by adding SnO_2 and Eu(2)O(3) powder, respectively, to the ZnO precursor powder. All the samples have been characterized by the emissive and cathodoluminescence (CL) modes of scanning electron microscopy. CL images from SnO_2:In and In_2O_3:Sn tubes and islands show a higher emission from the Sn-rich structures related to oxygen deficiency. CL of doped ZnO enables to detect the presence of dopant in specific regions or structures. CL appears to be a useful technique to study optical and electronic properties of semiconductor Oxide nanostructures.
PB Wiley-Blackwell
SN 0161-0457
YR 2008
FD 2008-07
LK https://hdl.handle.net/20.500.14352/50799
UL https://hdl.handle.net/20.500.14352/50799
LA eng
NO © Wiley Periodicals, Inc.This work is supported by MEC (MAT 2006-01259).
NO MEC
DS Docta Complutense
RD 9 jun 2025