RT Book, Section
T1 Uniformity characterization of SI-GaAs by cathodoluminescence and scanning electron acoustic microscopy
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
AB The capabilities of SEAM in uniformity assessment of SI GaAs are investigated. Profiles of SEAM signals across the wafer and SEAM images of dislocation distribution are obtained. Part of the nonlinear signal shows a profile that is not related to dislocation distribution.
PB IOP Publishing LTD
SN 0-85498-056-3
SN 0951-3248
YR 1989
FD 1989
LK https://hdl.handle.net/20.500.14352/60829
UL https://hdl.handle.net/20.500.14352/60829
NO © IOP Publishing LTD.Conference on Microscopy of Semiconducting Materials (1989. Oxford)
DS Docta Complutense
RD 7 abr 2025