TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2000
DO  - 10.1143/JJAP.39.6212
SN  - 0021-4922
UR  - https://hdl.handle.net/20.500.14352/59118
T2  - Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers
AB  - The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface state...
LA  - eng
M2  - 6212
PB  - Inst. Pure Applied Physics
KW  - Interface
KW  - Devices
KW  - Fabrication
KW  - Model.
TI  - Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures
TY  - journal article
VL  - 39
ER  -