TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
PY  - 2011
DO  - 10.1063/1.3626466
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/44234
T2  - Journal of Applied Physics
AB  - A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution during...
LA  - eng
PB  - American Institute of Physics
KW  - Efficiency Solar-Cells
KW  - Silicon Layers
KW  - Laser
KW  - Recombination
KW  - Enhancement
KW  - Absorption
KW  - Interface
KW  - Alloys.
TI  - Depth profile study of Ti implanted Si at very high doses
TY  - journal article
VL  - 110
ER  -