RT Journal Article
T1 Electronic-structure of fibonacci Si δ-doped GaAs
A1 Domínguez-Adame Acosta, Francisco
A1 Maciá Barber, Enrique Alfonso
A1 Méndez Martín, Bianchi
AB We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions.
PB Elsevier Science BV
SN 0375-9601
YR 1994
FD 1994-10-31
LK https://hdl.handle.net/20.500.14352/59007
UL https://hdl.handle.net/20.500.14352/59007
LA eng
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NO © Elsevier Science BV.The authors thank A. Sánchez for a critical reading of the manuscript. This work has been partially supported by Univeridad Complutense under project PR161/93-4811.
NO Universidad Complutense
DS Docta Complutense
RD 18 jul 2024