RT Journal Article
T1 Engineering strain and conductivity of MoO_(3) by ion implantation
A1 Pereira, Daniela R.
A1 Díaz-Guerra Viejo, Carlos
A1 Peres, M.
A1 Magalhães, Sérgio
A1 Correia, João  G.
A1 Marques, José G.
A1 Silva, Ana G.
A1 Alves, Eduardo
A1 Lorenz, Katharina
AB α-MoO_(3) lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 × 1012 cm−2 and 1 × 1017 cm−2, in order to modify the electrical and structural properties of the crystals. A controllable and significant increase of the electrical conductivity, over several orders of magnitude, is observed after implantation at high fluences. Based on high resolution X-ray diffraction (HRXRD) and micro-Raman spectroscopy measurements, this effect is attributed to the formation of donor-type defect complexes and new phases more conductive than the α-MoO_(3) orthorhombic phase. A significant expansion of the b lattice parameter, increasing with fluence, is observed as a response to the defects created by implantation. Strain build-up occurs in several steps and in distinct depth regions within the implanted layer. Contrary to the typical values reported for other implanted oxide materials, an unusually high maximum perpendicular deformation of ∼3% is verified.
PB Elsevier Sicence Ltd
SN 1359-6454
YR 2019
FD 2019-02-21
LK https://hdl.handle.net/20.500.14352/115105
UL https://hdl.handle.net/20.500.14352/115105
LA eng
NO Pereira, D. R., Díaz-Guerra, C., Peres, M., Magalhaes, S., Correia, J. G., Marques, J. G., ... & Lorenz, K. (2019). Engineering strain and conductivity of MoO3 by ion implantation. Acta Materialia, 169, 15-27.
NO Fundacao para a Ciencia e a Tecnologia (FCT)
NO Ministerio de Economía y Competitividad (España)
DS Docta Complutense
RD 22 abr 2025