RT Journal Article
T1 Compensation and deep levels in II-VI compounds
A1 Castaldini, A.
A1 Cavallini, A:
A1 Fraboni, B.
A1 Polenta, L.
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
AB We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim Lye have utilized both junction spectroscopy techniques and cathodoluminescence (CL) spectroscopy. As junction spectroscopy methods we have utilized deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy (PICTS) and photo-DLTS (P-DLTS). By exploiting the peculiarities of these experimental methods, joined by CL characterization, we were able to gain further insight into the revealed traps properties, such as the trap nature (donor/acceptor). We have focused our attention on the deep levels that have been suggested to be involved in the compensation process, such as centre A.
PB Elsevier Science Sa
SN 0921-5107
YR 1996
FD 1996-12-15
LK https://hdl.handle.net/20.500.14352/59228
UL https://hdl.handle.net/20.500.14352/59228
LA eng
NO © 1996 - Elsevier Science S.A.International Workshop on Beam Injection Assessment of Defects in Semiconductors (4. 1996. El Escorial, España).This research has been partially supported by the  Cooperation Programme “Azione Integrata” between Italy and Spain and by DGICYT (Project PB 93-1256). The authors are indebted to the Japan Energy Corporation for the undoped and Cl doped samples.
NO DGICYT
DS Docta Complutense
RD 7 abr 2025