%0 Journal Article
%A Rodríguez Fernández, J.
%A Carcelen, V.
%A Hidalgo Alcalde, Pedro
%A Vijayan, N.
%A Piqueras De Noriega, Francisco Javier
%A Sochinskii, N. V.
%A Pérez, J. M.
%A Dieguez, E.
%T Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
%D 2009
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/44202
%X Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
%~