RT Journal Article
T1 Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
A1 Rodríguez Fernández, J.
A1 Carcelen, V.
A1 Hidalgo Alcalde, Pedro
A1 Vijayan, N.
A1 Piqueras De Noriega, Francisco Javier
A1 Sochinskii, N. V.
A1 Pérez, J. M.
A1 Dieguez, E.
AB Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
PB Amer Inst Physics
SN 0021-8979
YR 2009
FD 2009-08-15
LK https://hdl.handle.net/20.500.14352/44202
UL https://hdl.handle.net/20.500.14352/44202
LA eng
NO © 2009 American Institute of Physics.This work was partially supported by the following Projects: Grant Nos. MEC-ESP2006-09935, CM-S-0505/ MAT-079, and FP7-SEC-2007-01 “European Commision,” and Contract No. 14240/00/NL7SH “European Space Agency.” One of the authors, V.C., thanks MEC, Spain for financial support. N.V. is grateful to Department of Science and Technology, Government of India for providing the BOYSCAST fellowship. The author J.R.F. is thankful to the Universidad Autónoma of Madrid for the financial support.
NO European Commision
NO European Space Agency
NO Department of Science and Technology, Government of India
NO Universidad Autónoma de Madrid
DS Docta Complutense
RD 21 dic 2025