%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A Olea Ariza, Javier
%A Prado Millán, Álvaro Del
%T Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells
%D 2013
%@ 0021-4922
%U https://hdl.handle.net/20.500.14352/33557
%X In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at,photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.
%~