RT Journal Article T1 Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals A1 Carcelen, V. A1 Vijayan, N. A1 Rodríguez Fernández, J. A1 Hidalgo Alcalde, Pedro A1 Piqueras de Noriega, Javier A1 Sochinskii, N. V. A1 Pérez, J. M. A1 Dieguez, E. AB The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase using pyrolytic boron nitride ampoule in the Bridgman geometry, and (iii) by using a Pt tube used for the ampoule support as a cold finger. Several improvements were found in the thermal environments such as the effects of superheating and reduced growth velocity, as well as improvements in the grain size and zinc composition along the ingot. The compositional homogeneity and its current-voltage characteristic behaviour have been analysed using energy dispersive X-ray analysis and I-V method, respectively. PB Elsevier Science BV SN 0022-0248 YR 2009 FD 2009-02-15 LK https://hdl.handle.net/20.500.14352/44203 UL https://hdl.handle.net/20.500.14352/44203 LA eng NO [1] G. Li, W. Jie, H. Hua, Z. Gu, Prog. Cryst. Growth Charact. Mat. 46 (2003) 85.[2] A.E. Bolotnikov, G.S. Camarda, G.A. Carini, Y. Cui, L. Li, R.B. James, Nucl. Inst. Meth. Phys. Res. A 579 (2007) 129.[3] M.J. Harrison, A. Kargar, D.S. McGregor, Nucl. Inst. Meth. Phys. Res. A 579 (2007) 134.[4] M.C. Duff, D.B. Hunter, A. Burger,M. Groza, V. Buliga, D.R. Black, Appl. Surf. Sci. 254 (2008) 2889. [5] I. Jung, H. Krawczynski, A. Burger, M. Guo, M. Groza, Astropart. Phys. 28 (2007) 397. [6] M. Schieber, R.B. James, H. Hermon, A. Vilensky, I. Baydjanov, M. Goorsky T. Lam, E. Meerson, H.W. Yao, J. Erickson, E. Cross, A. Burger, J.O. Ndap G. Wright, M. Fiederle, J. Cryst. Growth 231 (2001) 235.[7] V. Carcelen, N. Vijayan, E. Dieguez, A. Zappetini, M. Zha, S. Lamine, A. Fauler, M. Fierderle, J. Optoelect. Adv. Mat. 10 (2008) 3135. [8] E. Saucedo, P. Rudolph, E. Dieguez, J. Cryst. Growth 310 (2008) 2067. [9] S. Kuppurao, J.J. Derby, J. Cryst. Growth 172 (1997) 350. [10] V. Carcelen, E. Dieguez, Patent demand No. 200801503, Spain. NO © 2008 Elsevier B.V.This work was partially supported by the following Projects: ESP2006-09935, Spanish ‘‘Ministerio de Educación y Ciencia’’; S-0505/MAT-0279, Spanish ‘‘Comunidad de Madrid’’; FP7-SEC- 2007-01, European Commission, and Contract number 14240/00/ NL/SH, European Space Agency. One of the authors VC is thankful to the Ministry of Education and Science, Spain for the financial support. The author NV is grateful to Department of Science and Technology, Govt. of India for providing the BOYSCAST fellowship. The author JRF is thankful to the Universidad Autónoma of Madrid for financial support. NO España. Ministerio de Educación y Ciencia NO Comunidad de Madrid NO European Commission NO European Space Agency NO Department of Science and Technology, Govt. of India NO Universidad Autónoma de Madrid DS Docta Complutense RD 17 may 2024