RT Journal Article
T1 Formation of porous layers on n-GaSb by electrochemical etching
A1 Storgards, J.
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Chenot, M.
A1 Dimroth, F.
A1 Bett, A.V.
AB The effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the pores following preferential directions, while at high current density (15 mA cm_(-2)) pores of sizes less than 100 nm were observed. Furthermore, a comparison between the luminescence in the porous layer and bulk GaSb is also performed. On the other hand, anodization in HF leads to an electropolishing process and no porosification is obtained.
PB Iop Publishing Ltd
SN 0268-1242
YR 2004
FD 2004-07
LK https://hdl.handle.net/20.500.14352/50954
UL https://hdl.handle.net/20.500.14352/50954
LA eng
NO © 2004 IOP Publishing Ltd.This work is carried out in the framework of a European Marie Curie project (HPMT-CT-2001-00215). Support of MCYT (MAT2003-00455) is acknowledged.
NO European Marie Curie project
NO MCYT
DS Docta Complutense
RD 15 abr 2025