TY  - JOUR
AU  - Storgards, J.
AU  - Méndez Martín, Bianchi
AU  - Piqueras de Noriega, Javier
AU  - Chenot, M.
AU  - Dimroth, F.
AU  - Bett, A.V.
PY  - 2004
DO  - 10.1088/0268-1242/19/7/021
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/50954
T2  - Semiconductor Science and Technology
AB  - The effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5...
LA  - eng
M2  - 902
PB  - Iop Publishing Ltd
KW  - Silicon
KW  - Gaas
KW  - Cathodoluminescence
KW  - Semiconductors
KW  - Surface
KW  - Inp
KW  - Photoluminescence
KW  - Initiation
KW  - Growth
KW  - Pores
TI  - Formation of porous layers on n-GaSb by electrochemical etching
TY  - journal article
VL  - 19
ER  -