RT Journal Article
T1 Minority carrier diffusion length in AlGaN: A combined electron beam induced current and transmission microscopy
A1 Cremades Rodríguez, Ana Isabel
A1 Albrecht, M.
A1 Voigt, A.
A1 Krinke, J.
A1 Dimitrov, R.
A1 Ambacher, O.
A1 Stutzmann, M.
AB Combined electron beam induced current and transmission electron microscopy measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminium contents x ranging from x=0 to x=0.79. TEM analysis shows the distribution and type of structural defects, the content of cubic phase and the decomposition phenomena strongly to depend on the Al content of the layers. The influence of the cubic phase on the electronic properties of the samples is discussed taking into account the high piezoelectric effect present in these alloys. The diffusion length of minority carriers has been determined by EBIC measurements and a lower limit of the lifetime has been estimated.
PB Trans Tech-Scitec Publications LDT
SN 1012-0394
YR 1998
FD 1998
LK https://hdl.handle.net/20.500.14352/58847
UL https://hdl.handle.net/20.500.14352/58847
DS Docta Complutense
RD 28 sept 2024