%0 Journal Article
%A Martil De La Plaza, Ignacio
%A García Hemme, Eric
%A García Hernansanz, Rodrigo
%A González Díaz, Germán
%A Olea Ariza, Javier
%A Pastor Pastor, David
%A Prado Millán, Álvaro Del
%T Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
%D 2014
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/33683
%X We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mVW(-1) has been obtained operating at the useful telecommunication applications wavelength of 1.55 mu m (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 x 10(4) cm Hz(1/2) W-1 at 660Hz, under a 1.55 mu m wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology.
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