TY  - JOUR
AU  - Nogales Díaz, Emilio
AU  - Joachimsthaler, I.
AU  - Heiderhoff, R.
AU  - Piqueras De Noriega, Francisco Javier
AU  - Balk, L.J.
PY  - 2002
DO  - 10.1063/1.148744
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59111
T2  - Journal of Applied Physics
AB  - Near-field cathodoluminescence (NFCL) has been used to characterize hydride vapor phase epitaxy grown n-GaN films. This technique can obtain high resolution luminescence images and perform local measurements of the diffusion length for minority...
LA  - eng
M2  - 976
PB  - American Institute of Physics
KW  - Gan Epilayers
KW  - Luminescence
KW  - Defects
TI  - Near-field cathodoluminescence studies on n-doped gallium nitride films
TY  - journal article
VL  - 92
ER  -